Abstract
Aluminium-doped lead sulfide (PbS) thin films were deposited on glass substrates by using a low-cost nebulizer spray pyrolysis (NSP) method for photovoltaic applications. The Aluminium content was varied from Pure to 5 Wt.% to study its effect on structural, surface, optical, and electrical properties. X-ray diffraction results confirm the formation of polycrystalline PbS with a cubic crystal structure. The films show a strong preferential orientation along the (200) plane. The crystallite size ranges between 18 and 20 nm and changes slightly with doping level. Optical studies show a clear increase in direct band gap from 1.54 eV for the Pure PbS film to 1.66 eV for the 5 Wt.% Al-doped PbS film. This shift indicates a modification in electronic structure and defect states resulting from Aluminium incorporation. Electrical analysis shows lower resistivity and higher carrier concentration at 2.5 Wt.% Al doping. The results indicate that controlled Al doping improves the optoelectronic behaviour of PbS thin films and makes them suitable for low-cost solar cell applications.
Keywords
PbS Thin Films, Aluminium Doping, Nebulizer Spray Pyrolysis, Band Gap Tuning, Photovoltaics Semiconductor Thin Films,Downloads
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